Proc. MRS, 584, In Press (1999)
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Systematic Studies of Fullerene Derivative Electron Beam Resists
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Presented at: MRS Fall Symposium 1999
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| Mat. Res. Soc. Symp. Proc., Vol. 584, eds. L. Merhari et al (Materials Research Society, Pennsylvania, USA, 2000), p. 115 - 120 |
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A.P.G. Robinson, R.E. Palmer, T. Tada, T. Kanayama, E.J. Shelley, D.
Philp, and J.A. Preece
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We report systematic studies of the response of C60 derivatives
to electron beam irradiation. Films of fourteen different mono, tris and
tetra adduct methanofullerene C60 derivatives were produced by
spin coating on hydrogen terminated silicon substrates. Exposure of the
films to a 20 keV electron beam substantially altered the dissolution rate
of the derivative films in organic solvents such as monochlorobenzene. All
of the derivatives exhibited negative tone resist behaviour with
sensitivities between ~ 8.5 x 10-4 and ~ 4 x 10-3
C/cm2, much higher than that of C60. Features with
widths of ~ 20 nm were produced using these compounds, and the etch ratios
of the compounds were found to be more than twice those of a standard
novolac based resist (SAL601).
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