Proc. MRS, 546, 219 (1999)
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Fullerene Derivatives as Novel Resist Materials for Fabrication of MEMS
Devices by Electron Beam Lithography
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Presented at: MRS Fall Symposium 1998
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| Mat. Res. Soc. Symp. Proc., Vol. 546, eds. A.H. Heuer and S.J. Jacobs (Materials Research Society, Pennsylvania, USA, 1999), p. 219 - 224 |
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A.P.G. Robinson, R.E. Palmer, T. Tada, T. Kanayama, E.J. Shelley and J.A.
Preece
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The fabrication of MEMS and electronic devices relies heavily on
lithography. We have explored the application of derivatives of
C60 as high resolution, high etch durability resists. Spin
coating was used to produce films of various methanofullerenes on silicon
substrates, with thickness ranging from 20 to 200 nm. These films behave
as effective high resolution negative tone electron beam resists allowing
sub 20 nm patterning of silicon which compares favorably with other
negative tone resists. Organic solvents such as monochlorobenzene and
chloroform can be used to develop the exposed films. The films have
sensitivities of 4 x 10-3 to 8 x 10-4
C/cm2 for 20 keV electrons, more than an order of magnitude
higher than the sensitivity of C60. The dry etch durabilities
of these compounds are considerably higher than those of conventional
resists. A silicon grid with hole depth 160 nm and wall thickness 20 nm
has been fabricated to demonstrate the high resolution and high etch
durability of these resists.
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