J. Photopolym. Sci. Technol., 11, 581 (1998)

Functionalization of Fullerene for Electron Beam Nanolithography Resist

Journal of Photopolymer Science and Technology, 11, No. 4, 581 - 584 (1998)
T. Tada, T. Kanayama, A.P.G. Robinson, R.E. Palmer and J.A. Preece

We have found that chemical modification of C60 to the methanofullerenes improve the properties as an electron beam resist. Several types of methanofullerenes exhibit good resolution and high dry-etch durability, and the films can be prepared by spin coating. Thus they can be used for nanometer scale patterning. The sensitivity is ~ 1 x 10-3 C/cm2, an order of magnitude higher that that of C60. The performance of the resists was demonstrated by defining 20 nm features. The results of Raman measurements suggest that the exposure mechanism may be due to destruction of the C60 cage by electron irradiation.



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