J. Photopolym. Sci. Technol., 11, 581 (1998)
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Functionalization of Fullerene for Electron Beam Nanolithography Resist
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| Journal of Photopolymer Science and Technology, 11, No. 4, 581 - 584 (1998) |
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T. Tada, T. Kanayama, A.P.G. Robinson, R.E. Palmer and J.A. Preece
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We have found that chemical modification of C60 to the
methanofullerenes improve the properties as an electron beam resist.
Several types of methanofullerenes exhibit good resolution and high
dry-etch durability, and the films can be prepared by spin coating. Thus
they can be used for nanometer scale patterning. The sensitivity is ~ 1 x
10-3 C/cm2, an order of magnitude higher that that of
C60. The performance of the resists was demonstrated by
defining 20 nm features. The results of Raman measurements suggest that
the exposure mechanism may be due to destruction of the C60
cage by electron irradiation.
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