Inst. Phys. Conf. Series, No. 164, 513 (1999)

Transmission Electron Microscopy Studies of Photochemically Etched Porous Silicon

Presented at: Microscopy of Semiconducting Materials 1999

Institute of Physics Conference Series, No. 164, 513 (1999)
A. Wellner, R.E. Palmer, K.W. Kolasinski, L. Koker and M. Aindow

The morphology of photochemically etched n-type [100] porous silicon has been investigated using transmission electron microscopy. The porous silicon was found to form square macropores with edges aligned along the <011> directions and edge lengths of several microns. These macropores contain nanoporous silicon which still exhibits the [100] orientation. The nanoporous silicon exhibits significant lattice strain, estimated to be in the range of 1 - 2%. Since the samples have been exposed to air the expected oxide layer may account for this strain.



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